Physical mechanisms involved in the formation and operation of memory devices based on a monolayer of gold nanoparticle-polythiophene hybrid materials

Understanding the physical and chemical mechanisms occurring during the forming process and operation of an organic resistive memory device is a requisite for better performance. Various mechanisms were suggested in vertically stacked memory structures, but the analysis remains indirect and needs de...

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Detalles Bibliográficos
Autores principales: Zhang, T., Guérin, D., Alibart, F., Troadec, D., Hourlier, D., Patriarche, G., Yassin, A., Oçafrain, M., Blanchard, P., Roncali, J., Vuillaume, D., Lmimouni, K., Lenfant, S.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: RSC 2019
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9417853/
https://www.ncbi.nlm.nih.gov/pubmed/36132737
http://dx.doi.org/10.1039/c9na00285e

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9417853/
https://www.ncbi.nlm.nih.gov/pubmed/36132737
http://dx.doi.org/10.1039/c9na00285e

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