Correction: Hafnium–zirconium oxide interface models with a semiconductor and metal for ferroelectric devices

Correction for ‘Hafnium–zirconium oxide interface models with a semiconductor and metal for ferroelectric devices’ by Kisung Chae et al., Nanoscale Adv., 2021, DOI: 10.1039/d1na00230a.

Detalles Bibliográficos
Autores principales: Chae, Kisung, Kummel, Andrew C., Cho, Kyeongjae
Formato: Online Artículo Texto
Lenguaje:English
Publicado: RSC 2021
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9418119/
https://www.ncbi.nlm.nih.gov/pubmed/36136423
http://dx.doi.org/10.1039/d1na90069b

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9418119/
https://www.ncbi.nlm.nih.gov/pubmed/36136423
http://dx.doi.org/10.1039/d1na90069b

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