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Correction: Hafnium–zirconium oxide interface models with a semiconductor and metal for ferroelectric devices
Correction for ‘Hafnium–zirconium oxide interface models with a semiconductor and metal for ferroelectric devices’ by Kisung Chae et al., Nanoscale Adv., 2021, DOI: 10.1039/d1na00230a.
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
RSC
2021
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9418119/ https://www.ncbi.nlm.nih.gov/pubmed/36136423 http://dx.doi.org/10.1039/d1na90069b |
| Sumario: | Correction for ‘Hafnium–zirconium oxide interface models with a semiconductor and metal for ferroelectric devices’ by Kisung Chae et al., Nanoscale Adv., 2021, DOI: 10.1039/d1na00230a. |
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