Barrier-assisted vapor phase CVD of large-area MoS(2) monolayers with high spatial homogeneity

Atomically thin molybdenum disulphide (MoS(2)) is a direct band gap semiconductor with negatively charged trions and stable excitons in striking contrast to the wonder material graphene. While large-area growth of MoS(2) can be readily achieved by gas-phase chemical vapor deposition (CVD), growth of...

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Detalles Bibliográficos
Autores principales: Durairaj, Santhosh, Krishnamoorthy, P., Raveendran, Navanya, Ryu, Beo Deul, Hong, Chang-Hee, Seo, Tae Hoon, Chandramohan, S.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: RSC 2020
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9418203/
https://www.ncbi.nlm.nih.gov/pubmed/36132761
http://dx.doi.org/10.1039/d0na00524j

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9418203/
https://www.ncbi.nlm.nih.gov/pubmed/36132761
http://dx.doi.org/10.1039/d0na00524j

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