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Barrier-assisted vapor phase CVD of large-area MoS(2) monolayers with high spatial homogeneity

Atomically thin molybdenum disulphide (MoS(2)) is a direct band gap semiconductor with negatively charged trions and stable excitons in striking contrast to the wonder material graphene. While large-area growth of MoS(2) can be readily achieved by gas-phase chemical vapor deposition (CVD), growth of...

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Detalles Bibliográficos
Autores principales:	Durairaj, Santhosh, Krishnamoorthy, P., Raveendran, Navanya, Ryu, Beo Deul, Hong, Chang-Hee, Seo, Tae Hoon, Chandramohan, S.
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	RSC 2020
Materias:	Chemistry
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9418203/ https://www.ncbi.nlm.nih.gov/pubmed/36132761 http://dx.doi.org/10.1039/d0na00524j

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