Bandgap energy modeling of the deformed ternary GaAs(1-u)N(u) by artificial neural networks

Appraising the bandgap energy of materials is a major issue in the field of band engineering. To better understand the behavior of GaAs(1-u)N(u) material, it is necessary to improve the applied calculation methodologies. The band anticrossing model (BAC) allows modeling of the bandgap energy when di...

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Detalles Bibliográficos
Autores principales: Tarbi, A., Chtouki, T., Elkouari, Y., Erguig, H., Migalska-Zalas, A., Aissat, A.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Elsevier 2022
Materias:
Research Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9418364/
https://www.ncbi.nlm.nih.gov/pubmed/36039133
http://dx.doi.org/10.1016/j.heliyon.2022.e10212

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9418364/
https://www.ncbi.nlm.nih.gov/pubmed/36039133
http://dx.doi.org/10.1016/j.heliyon.2022.e10212

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