Enhanced luminescence/photodetecting bifunctional devices based on ZnO:Ga microwire/p-Si heterojunction by incorporating Ag nanowires

With the disadvantages of indirect band gap, low carrier mobility, and large lattice mismatch with other semiconductor materials, one of the current challenges in Si-based materials and structures is to prepare low-dimensional high-performance optoelectronic devices. In this work, an individual ZnO...

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Detalles Bibliográficos
Autores principales: Liu, Yang, Dai, Ruiming, Jiang, Mingming, Tang, Kai, Wan, Peng, Kan, Caixia
Formato: Online Artículo Texto
Lenguaje:English
Publicado: RSC 2021
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9418426/
https://www.ncbi.nlm.nih.gov/pubmed/36133259
http://dx.doi.org/10.1039/d1na00428j

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9418426/
https://www.ncbi.nlm.nih.gov/pubmed/36133259
http://dx.doi.org/10.1039/d1na00428j

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