A first-principles study of the switching mechanism in GeTe/InSbTe superlattices

Interfacial Phase Change Memories (iPCMs) based on (GeTe)(2)/Sb(2)Te(3) superlattices have been proposed as an alternative candidate to conventional PCMs for the realization of memory devices with superior switching properties. The switching mechanism was proposed to involve a crystalline-to-crystal...

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Detalles Bibliográficos
Autores principales: Ribaldone, Chiara, Dragoni, Daniele, Bernasconi, Marco
Formato: Online Artículo Texto
Lenguaje:English
Publicado: RSC 2020
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9418462/
https://www.ncbi.nlm.nih.gov/pubmed/36132039
http://dx.doi.org/10.1039/d0na00577k

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9418462/
https://www.ncbi.nlm.nih.gov/pubmed/36132039
http://dx.doi.org/10.1039/d0na00577k

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