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A first-principles study of the switching mechanism in GeTe/InSbTe superlattices
Interfacial Phase Change Memories (iPCMs) based on (GeTe)(2)/Sb(2)Te(3) superlattices have been proposed as an alternative candidate to conventional PCMs for the realization of memory devices with superior switching properties. The switching mechanism was proposed to involve a crystalline-to-crystal...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
RSC
2020
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9418462/ https://www.ncbi.nlm.nih.gov/pubmed/36132039 http://dx.doi.org/10.1039/d0na00577k |