In situ TEM observation of void formation and migration in phase change memory devices with confined nanoscale Ge(2)Sb(2)Te(5)

The reliability of Ge–Sb–Te phase-change memory (PCM) devices has been limited by failure due to void formation and this still remains one of the critical issues affecting their use in storage-class memory applications. To directly observe the void formation processes in real-time, we implemented in...

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Detalles Bibliográficos
Autores principales: Oh, Sang Ho, Baek, Kyungjoon, Son, Sung Kyu, Song, Kyung, Oh, Jang Won, Jeon, Seung-Joon, Kim, Won, Yoo, Jong Hee, Lee, Kee Jeung
Formato: Online Artículo Texto
Lenguaje:English
Publicado: RSC 2020
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9418481/
https://www.ncbi.nlm.nih.gov/pubmed/36132805
http://dx.doi.org/10.1039/d0na00223b

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9418481/
https://www.ncbi.nlm.nih.gov/pubmed/36132805
http://dx.doi.org/10.1039/d0na00223b

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