Transformation of threshold volatile switching to quantum point contact originated nonvolatile switching in graphene interface controlled memory devices

Resistive switching devices based on binary transition metal oxides have been widely investigated. However, these devices invariably manifest threshold switching characteristics when the active metal electrode is silver, the dielectric layer is hafnium oxide and platinum is used as the bottom electr...

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Detalles Bibliográficos
Autores principales: Wu, Zuheng, Zhao, Xiaolong, Yang, Yang, Wang, Wei, Zhang, Xumeng, Wang, Rui, Cao, Rongrong, Liu, Qi, Banerjee, Writam
Formato: Online Artículo Texto
Lenguaje:English
Publicado: RSC 2019
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9418922/
https://www.ncbi.nlm.nih.gov/pubmed/36133528
http://dx.doi.org/10.1039/c9na00409b

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9418922/
https://www.ncbi.nlm.nih.gov/pubmed/36133528
http://dx.doi.org/10.1039/c9na00409b

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