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Transformation of threshold volatile switching to quantum point contact originated nonvolatile switching in graphene interface controlled memory devices
Resistive switching devices based on binary transition metal oxides have been widely investigated. However, these devices invariably manifest threshold switching characteristics when the active metal electrode is silver, the dielectric layer is hafnium oxide and platinum is used as the bottom electr...
| Autores principales: | , , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
RSC
2019
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9418922/ https://www.ncbi.nlm.nih.gov/pubmed/36133528 http://dx.doi.org/10.1039/c9na00409b |