Hafnium–zirconium oxide interface models with a semiconductor and metal for ferroelectric devices

Density functional theory (DFT) is employed to investigate ferroelectric (FE) hafnium–zirconium oxide stack models for both metal–insulator–metal (MIM) and metal–insulator–semiconductor (MIS) structures. The role of dielectric (DE) interlayers at the ferroelectric interfaces with metals and semicond...

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Detalles Bibliográficos
Autores principales: Chae, Kisung, Kummel, Andrew C., Cho, Kyeongjae
Formato: Online Artículo Texto
Lenguaje:English
Publicado: RSC 2021
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9418924/
https://www.ncbi.nlm.nih.gov/pubmed/36134312
http://dx.doi.org/10.1039/d1na00230a

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9418924/
https://www.ncbi.nlm.nih.gov/pubmed/36134312
http://dx.doi.org/10.1039/d1na00230a

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