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Hafnium–zirconium oxide interface models with a semiconductor and metal for ferroelectric devices
Density functional theory (DFT) is employed to investigate ferroelectric (FE) hafnium–zirconium oxide stack models for both metal–insulator–metal (MIM) and metal–insulator–semiconductor (MIS) structures. The role of dielectric (DE) interlayers at the ferroelectric interfaces with metals and semicond...
Autores principales: | , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
RSC
2021
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9418924/ https://www.ncbi.nlm.nih.gov/pubmed/36134312 http://dx.doi.org/10.1039/d1na00230a |
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author | Chae, Kisung Kummel, Andrew C. Cho, Kyeongjae |
author_facet | Chae, Kisung Kummel, Andrew C. Cho, Kyeongjae |
author_sort | Chae, Kisung |
collection | PubMed |
description | Density functional theory (DFT) is employed to investigate ferroelectric (FE) hafnium–zirconium oxide stack models for both metal–insulator–metal (MIM) and metal–insulator–semiconductor (MIS) structures. The role of dielectric (DE) interlayers at the ferroelectric interfaces with metals and semiconductors and the effects of thickness scaling of FE and DE layers were investigated using atomic stack models. A high internal field is induced in the FE and DE layers by the FE polarization field which can promote defect generation leading to limited endurance. It is also shown that device operation will be adversely affected by too thick DE interlayers due to high operating voltage. These DFT models elucidate the underlying mechanisms of the lower endurance in experimental MIS devices compared to MIM devices and provide insights into the fundamental mechanisms at the interfaces. |
format | Online Article Text |
id | pubmed-9418924 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2021 |
publisher | RSC |
record_format | MEDLINE/PubMed |
spelling | pubmed-94189242022-09-20 Hafnium–zirconium oxide interface models with a semiconductor and metal for ferroelectric devices Chae, Kisung Kummel, Andrew C. Cho, Kyeongjae Nanoscale Adv Chemistry Density functional theory (DFT) is employed to investigate ferroelectric (FE) hafnium–zirconium oxide stack models for both metal–insulator–metal (MIM) and metal–insulator–semiconductor (MIS) structures. The role of dielectric (DE) interlayers at the ferroelectric interfaces with metals and semiconductors and the effects of thickness scaling of FE and DE layers were investigated using atomic stack models. A high internal field is induced in the FE and DE layers by the FE polarization field which can promote defect generation leading to limited endurance. It is also shown that device operation will be adversely affected by too thick DE interlayers due to high operating voltage. These DFT models elucidate the underlying mechanisms of the lower endurance in experimental MIS devices compared to MIM devices and provide insights into the fundamental mechanisms at the interfaces. RSC 2021-06-29 /pmc/articles/PMC9418924/ /pubmed/36134312 http://dx.doi.org/10.1039/d1na00230a Text en This journal is © The Royal Society of Chemistry https://creativecommons.org/licenses/by-nc/3.0/ |
spellingShingle | Chemistry Chae, Kisung Kummel, Andrew C. Cho, Kyeongjae Hafnium–zirconium oxide interface models with a semiconductor and metal for ferroelectric devices |
title | Hafnium–zirconium oxide interface models with a semiconductor and metal for ferroelectric devices |
title_full | Hafnium–zirconium oxide interface models with a semiconductor and metal for ferroelectric devices |
title_fullStr | Hafnium–zirconium oxide interface models with a semiconductor and metal for ferroelectric devices |
title_full_unstemmed | Hafnium–zirconium oxide interface models with a semiconductor and metal for ferroelectric devices |
title_short | Hafnium–zirconium oxide interface models with a semiconductor and metal for ferroelectric devices |
title_sort | hafnium–zirconium oxide interface models with a semiconductor and metal for ferroelectric devices |
topic | Chemistry |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9418924/ https://www.ncbi.nlm.nih.gov/pubmed/36134312 http://dx.doi.org/10.1039/d1na00230a |
work_keys_str_mv | AT chaekisung hafniumzirconiumoxideinterfacemodelswithasemiconductorandmetalforferroelectricdevices AT kummelandrewc hafniumzirconiumoxideinterfacemodelswithasemiconductorandmetalforferroelectricdevices AT chokyeongjae hafniumzirconiumoxideinterfacemodelswithasemiconductorandmetalforferroelectricdevices |