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Hafnium–zirconium oxide interface models with a semiconductor and metal for ferroelectric devices
Density functional theory (DFT) is employed to investigate ferroelectric (FE) hafnium–zirconium oxide stack models for both metal–insulator–metal (MIM) and metal–insulator–semiconductor (MIS) structures. The role of dielectric (DE) interlayers at the ferroelectric interfaces with metals and semicond...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
RSC
2021
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9418924/ https://www.ncbi.nlm.nih.gov/pubmed/36134312 http://dx.doi.org/10.1039/d1na00230a |