Bias dependent variability of low-frequency noise in single-layer graphene FETs

Low-frequency noise (LFN) variability in graphene transistors (GFETs) is for the first time researched in this work under both experimental and theoretical aspects. LFN from an adequate statistical sample of long-channel solution-gated single-layer GFETs is measured in a wide range of operating cond...

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Detalles Bibliográficos
Autores principales: Mavredakis, Nikolaos, Cortadella, Ramon Garcia, Illa, Xavi, Schaefer, Nathan, Calia, Andrea Bonaccini, Anton-Guimerà-Brunet, Garrido, Jose A., Jiménez, David
Formato: Online Artículo Texto
Lenguaje:English
Publicado: RSC 2020
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9418965/
https://www.ncbi.nlm.nih.gov/pubmed/36132035
http://dx.doi.org/10.1039/d0na00632g

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9418965/
https://www.ncbi.nlm.nih.gov/pubmed/36132035
http://dx.doi.org/10.1039/d0na00632g

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