Cargando…
Bias dependent variability of low-frequency noise in single-layer graphene FETs
Low-frequency noise (LFN) variability in graphene transistors (GFETs) is for the first time researched in this work under both experimental and theoretical aspects. LFN from an adequate statistical sample of long-channel solution-gated single-layer GFETs is measured in a wide range of operating cond...
| Autores principales: | , , , , , , , |
|---|---|
| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
RSC
2020
|
| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9418965/ https://www.ncbi.nlm.nih.gov/pubmed/36132035 http://dx.doi.org/10.1039/d0na00632g |