Nonlinear ion drift-diffusion memristance description of TiO(2) RRAM devices

The nature and direction of the hysteresis in memristive devices is critical to device operation and performance and the ability to realise their potential in neuromorphic applications. TiO(2) is a prototypical memristive device material and is known to show hysteresis loops with both clockwise swit...

Descripción completa

Detalles Bibliográficos
Autores principales: Alialy, Sahar, Esteki, Koorosh, Ferreira, Mauro S., Boland, John J., Gomes da Rocha, Claudia
Formato: Online Artículo Texto
Lenguaje:English
Publicado: RSC 2020
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9419089/
https://www.ncbi.nlm.nih.gov/pubmed/36133364
http://dx.doi.org/10.1039/d0na00195c

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9419089/
https://www.ncbi.nlm.nih.gov/pubmed/36133364
http://dx.doi.org/10.1039/d0na00195c

Ejemplares similares