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Nonlinear ion drift-diffusion memristance description of TiO(2) RRAM devices
The nature and direction of the hysteresis in memristive devices is critical to device operation and performance and the ability to realise their potential in neuromorphic applications. TiO(2) is a prototypical memristive device material and is known to show hysteresis loops with both clockwise swit...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
RSC
2020
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9419089/ https://www.ncbi.nlm.nih.gov/pubmed/36133364 http://dx.doi.org/10.1039/d0na00195c |