Cross-sectional shape evolution of GaN nanowires during molecular beam epitaxy growth on Si(111)

We study the cross-sectional shape of GaN nanowires (NWs) by transmission electron microscopy. The shape is examined at different heights of long NWs, as well as at the same height for NWs of different lengths. Two distinct trends in the evolution of the cross-sectional shape along the NW length are...

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Detalles Bibliográficos
Autores principales: Volkov, Roman, Borgardt, Nikolai I., Konovalov, Oleg V., Fernández-Garrido, Sergio, Brandt, Oliver, Kaganer, Vladimir M.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: RSC 2021
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9419090/
https://www.ncbi.nlm.nih.gov/pubmed/36132694
http://dx.doi.org/10.1039/d1na00773d

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9419090/
https://www.ncbi.nlm.nih.gov/pubmed/36132694
http://dx.doi.org/10.1039/d1na00773d

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