Mixed-dimensional InAs nanowire on layered molybdenum disulfide heterostructures via selective-area van der Waals epitaxy

Self-assembly of vertically aligned III–V semiconductor nanowires (NWs) on two-dimensional (2D) van der Waals (vdW) nanomaterials allows for integration of novel mixed-dimensional nanosystems with unique properties for optoelectronic and nanoelectronic device applications. Here, selective-area vdW e...

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Detalles Bibliográficos
Autores principales: Baboli, Mohadeseh A., Abrand, Alireza, Burke, Robert A., Fedorenko, Anastasiia, Wilhelm, Thomas S., Polly, Stephen J., Dubey, Madan, Hubbard, Seth M., Mohseni, Parsian K.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: RSC 2021
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9419183/
https://www.ncbi.nlm.nih.gov/pubmed/36134188
http://dx.doi.org/10.1039/d0na00768d

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9419183/
https://www.ncbi.nlm.nih.gov/pubmed/36134188
http://dx.doi.org/10.1039/d0na00768d

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