Synthesis and characterization of Ge-core/a-Si-shell nanowires with conformal shell thickness deposited after gold removal for high-mobility p-channel field-effect transistors

Ge-core/a-Si-shell nanowires were synthesized in three consecutive steps. Nominally undoped crystalline Ge nanowires were first grown using a vapor–liquid–solid growth mechanism, followed by gold catalyst removal in an etching solution and deposition of a thin layer of amorphous silicon on the nanow...

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Detalles Bibliográficos
Autores principales: Simanullang, Marolop Dapot Krisman, Wisna, G. Bimananda M., Usami, Koichi, Oda, Shunri
Formato: Online Artículo Texto
Lenguaje:English
Publicado: RSC 2020
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9419733/
https://www.ncbi.nlm.nih.gov/pubmed/36132315
http://dx.doi.org/10.1039/d0na00023j

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9419733/
https://www.ncbi.nlm.nih.gov/pubmed/36132315
http://dx.doi.org/10.1039/d0na00023j

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