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Synthesis and characterization of Ge-core/a-Si-shell nanowires with conformal shell thickness deposited after gold removal for high-mobility p-channel field-effect transistors
Ge-core/a-Si-shell nanowires were synthesized in three consecutive steps. Nominally undoped crystalline Ge nanowires were first grown using a vapor–liquid–solid growth mechanism, followed by gold catalyst removal in an etching solution and deposition of a thin layer of amorphous silicon on the nanow...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
RSC
2020
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9419733/ https://www.ncbi.nlm.nih.gov/pubmed/36132315 http://dx.doi.org/10.1039/d0na00023j |