Anisotropic properties of pipe-GaN distributed Bragg reflectors

We report here a simple and robust process to convert periodic Si-doped GaN/undoped-GaN epitaxial layers into a porous-GaN/u-GaN distributed Bragg reflector (DBR) structure and demonstrate its material properties in a high-reflectance epitaxial reflector. Directional pipe-GaN layers with anisotropic...

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Detalles Bibliográficos
Autores principales: Wu, Chia-Jung, Chen, Yi-Yun, Wang, Cheng-Jie, Shiu, Guo-Yi, Huang, Chin-Han, Liu, Heng-Jui, Chen, Hsiang, Lin, Yung-Sen, Lin, Chia-Feng, Han, Jung
Formato: Online Artículo Texto
Lenguaje:English
Publicado: RSC 2020
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9419737/
https://www.ncbi.nlm.nih.gov/pubmed/36132299
http://dx.doi.org/10.1039/c9na00743a

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9419737/
https://www.ncbi.nlm.nih.gov/pubmed/36132299
http://dx.doi.org/10.1039/c9na00743a

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