Nanoscale growth of a Sn-guided SiGeSn alloy on Si (111) substrates by molecular beam epitaxy

Here, SiGeSn nanostructures were grown via molecular beam epitaxy on a Si (111) substrate with the assistance of Sn droplets. Owing to the thermal effect and the compressive strain induced by a lattice mismatch, Si and Sn atoms were successfully incorporated into the Ge matrix during the Sn-guided G...

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Detalles Bibliográficos
Autores principales: Wang, Liming, Zhang, Yichi, Sun, Hao, You, Jie, Miao, Yuanhao, Dong, Zuoru, Liu, Tao, Jiang, Zuimin, Hu, Huiyong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: RSC 2020
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9419757/
https://www.ncbi.nlm.nih.gov/pubmed/36133284
http://dx.doi.org/10.1039/d0na00680g

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9419757/
https://www.ncbi.nlm.nih.gov/pubmed/36133284
http://dx.doi.org/10.1039/d0na00680g

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