A GaSe/Si-based vertical 2D/3D heterojunction for high-performance self-driven photodetectors

We report on the fabrication of a vertical 2D/3D heterojunction diode between gallium selenide (GaSe) and silicon (Si), and describe its photoresponse properties. Kelvin probe force microscopy (KPFM) has been employed to investigate the surface potentials of the GaSe/Si heterostructure, leading to t...

Descripción completa

Detalles Bibliográficos
Autores principales: Sorifi, Sahin, Kaushik, Shuchi, Singh, Rajendra
Formato: Online Artículo Texto
Lenguaje:English
Publicado: RSC 2021
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9419784/
https://www.ncbi.nlm.nih.gov/pubmed/36132701
http://dx.doi.org/10.1039/d1na00659b

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9419784/
https://www.ncbi.nlm.nih.gov/pubmed/36132701
http://dx.doi.org/10.1039/d1na00659b

Ejemplares similares