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A GaSe/Si-based vertical 2D/3D heterojunction for high-performance self-driven photodetectors

We report on the fabrication of a vertical 2D/3D heterojunction diode between gallium selenide (GaSe) and silicon (Si), and describe its photoresponse properties. Kelvin probe force microscopy (KPFM) has been employed to investigate the surface potentials of the GaSe/Si heterostructure, leading to t...

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Detalles Bibliográficos
Autores principales:	Sorifi, Sahin, Kaushik, Shuchi, Singh, Rajendra
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	RSC 2021
Materias:	Chemistry
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9419784/ https://www.ncbi.nlm.nih.gov/pubmed/36132701 http://dx.doi.org/10.1039/d1na00659b

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