Impact of strain engineering and Sn content on GeSn heterostructured nanomaterials for nanoelectronics and photonic devices

Heterostructures based on the GeSn nanocompound have high impact on integrated photonics devices. The promising feature of GeSn nanostructures is its direct bandgap transition that is a result of Sn incorporation in the Ge networks, forming a strained structure. Herein, we demonstrate a deep survey...

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Detalles Bibliográficos
Autores principales: Nawwar, Mohamed A., Abo Ghazala, Magdy S., Sharaf El-Deen, Lobna M., Kashyout, Abd El-hady B.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2022
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9426448/
https://www.ncbi.nlm.nih.gov/pubmed/36128382
http://dx.doi.org/10.1039/d2ra04181b

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9426448/
https://www.ncbi.nlm.nih.gov/pubmed/36128382
http://dx.doi.org/10.1039/d2ra04181b

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