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Impact of strain engineering and Sn content on GeSn heterostructured nanomaterials for nanoelectronics and photonic devices
Heterostructures based on the GeSn nanocompound have high impact on integrated photonics devices. The promising feature of GeSn nanostructures is its direct bandgap transition that is a result of Sn incorporation in the Ge networks, forming a strained structure. Herein, we demonstrate a deep survey...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
The Royal Society of Chemistry
2022
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9426448/ https://www.ncbi.nlm.nih.gov/pubmed/36128382 http://dx.doi.org/10.1039/d2ra04181b |