Multi-level Cells and Quantized Conductance Characteristics of Al(2)O(3)-Based RRAM Device for Neuromorphic System

Recently, various resistance-based memory devices are being studied to replace charge-based memory devices to satisfy high-performance memory requirements. Resistance random access memory (RRAM) shows superior performances such as fast switching speed, structural scalability, and long retention. Thi...

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Detalles Bibliográficos
Autores principales: Lee, Yunseok, Park, Jongmin, Chung, Daewon, Lee, Kisong, Kim, Sungjun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2022
Materias:
Research
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9440974/
https://www.ncbi.nlm.nih.gov/pubmed/36057011
http://dx.doi.org/10.1186/s11671-022-03722-3

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9440974/
https://www.ncbi.nlm.nih.gov/pubmed/36057011
http://dx.doi.org/10.1186/s11671-022-03722-3

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