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Multi-level Cells and Quantized Conductance Characteristics of Al(2)O(3)-Based RRAM Device for Neuromorphic System
Recently, various resistance-based memory devices are being studied to replace charge-based memory devices to satisfy high-performance memory requirements. Resistance random access memory (RRAM) shows superior performances such as fast switching speed, structural scalability, and long retention. Thi...
Autores principales: | , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Springer US
2022
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9440974/ https://www.ncbi.nlm.nih.gov/pubmed/36057011 http://dx.doi.org/10.1186/s11671-022-03722-3 |