Influence of a Two-Dimensional Growth Mode on Electrical Properties of the GaN Buffer in an AlGaN/GaN High Electron Mobility Transistor

An extensive study has been conducted on a series of AlGaN/GaN high electron mobility transistor (HEMT) samples using metalorganic vapour phase epitaxy, to investigate the influence of growth modes for GaN buffer layers on device performance. The unintentional doping concentration and screw dislocat...

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Detalles Bibliográficos
Autores principales: Esendag, Volkan, Feng, Peng, Zhu, Chenqi, Ni, Rongzi, Bai, Jie, Wang, Tao
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9456622/
https://www.ncbi.nlm.nih.gov/pubmed/36079422
http://dx.doi.org/10.3390/ma15176043

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9456622/
https://www.ncbi.nlm.nih.gov/pubmed/36079422
http://dx.doi.org/10.3390/ma15176043

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