The Barrier’s Heights and Its Inhomogeneities on Diamond Silicon Interfaces

In this work, the electrical parameters of the polycrystalline diamonds’ p-PCD/n-Si heterojunction were investigated using temperature-dependent current–voltage (I-V) characteristics. In the temperature range of 80–280 K, the ideality factor ([Formula: see text]) and energy barrier height (φ(b)) wer...

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Detalles Bibliográficos
Autores principales: Łoś, Szymon, Fabisiak, Kazimierz, Paprocki, Kazimierz, Kozera, Wojciech, Knapowski, Tomasz, Szybowicz, Mirosław, Dychalska, Anna
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9456820/
https://www.ncbi.nlm.nih.gov/pubmed/36079275
http://dx.doi.org/10.3390/ma15175895

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9456820/
https://www.ncbi.nlm.nih.gov/pubmed/36079275
http://dx.doi.org/10.3390/ma15175895

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