High-κ van der Waals Oxide MoO(3) as Efficient Gate Dielectric for MoS(2) Field-Effect Transistors

Two-dimensional van der Waals crystals (2D vdW) are recognized as one of the potential materials to solve the physical limits caused by size scaling. Here, vdW metal oxide MoO(3) is applied with the gate dielectric in a 2D field-effect transistor (FET). Due to its high dielectric constant and the go...

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Detalles Bibliográficos
Autores principales: Wang, Junfan, Lai, Haojie, Huang, Xiaoli, Liu, Junjie, Lu, Yueheng, Liu, Pengyi, Xie, Weiguang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9457482/
https://www.ncbi.nlm.nih.gov/pubmed/36079239
http://dx.doi.org/10.3390/ma15175859

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9457482/
https://www.ncbi.nlm.nih.gov/pubmed/36079239
http://dx.doi.org/10.3390/ma15175859

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