High-κ van der Waals Oxide MoO(3) as Efficient Gate Dielectric for MoS(2) Field-Effect Transistors

Two-dimensional van der Waals crystals (2D vdW) are recognized as one of the potential materials to solve the physical limits caused by size scaling. Here, vdW metal oxide MoO(3) is applied with the gate dielectric in a 2D field-effect transistor (FET). Due to its high dielectric constant and the good response of MoS(2) to visible light, we obtained a field effect transistor for photodetection. In general, the device exhibits a threshold voltage near 0 V, Ion/Ioff ratio of 10(5), electron mobility about 85 cm(2) V(−1) s(−1) and a good response to visible light, the responsivity is near 5 A/W at low laser power, which shows that MoO(3) is a potential material as gate dielectric.