Role of Metallic Adlayer in Limiting Ge Incorporation into GaN

Atomically thin metal adlayers are used as surfactants in semiconductor crystal growth. The role of the adlayer in the incorporation of dopants in GaN is completely unexplored, probably because n-type doping of GaN with Si is relatively straightforward and can be scaled up with available Si atomic f...

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Detalles Bibliográficos
Autores principales: Turski, Henryk, Wolny, Pawel, Chlipala, Mikolaj, Sawicka, Marta, Reszka, Anna, Kempisty, Pawel, Konczewicz, Leszek, Muziol, Grzegorz, Siekacz, Marcin, Skierbiszewski, Czeslaw
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9457505/
https://www.ncbi.nlm.nih.gov/pubmed/36079311
http://dx.doi.org/10.3390/ma15175929

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9457505/
https://www.ncbi.nlm.nih.gov/pubmed/36079311
http://dx.doi.org/10.3390/ma15175929

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