The 3.4 GHz BAW RF Filter Based on Single Crystal AlN Resonator for 5G Application

To meet the stringent requirements of 5G communication, we proposed a high-performance bulk acoustic wave (BAW) filter based on single crystal AlN piezoelectric films on a SiC substrate. The fabrication of the BAW filter is compatible with the GaN high electron mobility transistor (HEMT) process, en...

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Detalles Bibliográficos
Autores principales: Ding, Rui, Xuan, Weipeng, Dong, Shurong, Zhang, Biao, Gao, Feng, Liu, Gang, Zhang, Zichao, Jin, Hao, Luo, Jikui
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9457965/
https://www.ncbi.nlm.nih.gov/pubmed/36080117
http://dx.doi.org/10.3390/nano12173082

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9457965/
https://www.ncbi.nlm.nih.gov/pubmed/36080117
http://dx.doi.org/10.3390/nano12173082

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