Improved Ferroelectric Properties in Hf(0.5)Zr(0.5)O(2) Thin Films by Microwave Annealing

In the doped hafnia(HfO(2))-based films, crystallization annealing is indispensable in forming ferroelectric phases. In this paper, we investigate the annealing effects of TiN/Hf(0.5)Zr(0.5)O(2)/TiN metal-ferroelectric-metal (MFM) capacitors by comparing microwave annealing (MWA) and rapid thermal a...

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Detalles Bibliográficos
Autores principales: Zhao, Biyao, Yan, Yunting, Bi, Jinshun, Xu, Gaobo, Xu, Yannan, Yang, Xueqin, Fan, Linjie, Liu, Mengxin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9457976/
https://www.ncbi.nlm.nih.gov/pubmed/36080036
http://dx.doi.org/10.3390/nano12173001

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9457976/
https://www.ncbi.nlm.nih.gov/pubmed/36080036
http://dx.doi.org/10.3390/nano12173001

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