Graphene Film Growth on Silicon Carbide by Hot Filament Chemical Vapor Deposition

The electrical properties of graphene on dielectric substrates, such as silicon carbide (SiC), have received much attention due to their interesting applications. This work presents a method to grow graphene on a 6H-SiC substrate at a pressure of 35 Torr by using the hot filament chemical vapor depo...

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Detalles Bibliográficos
Autores principales: Rodríguez-Villanueva, Sandra, Mendoza, Frank, Weiner, Brad R., Morell, Gerardo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9458213/
https://www.ncbi.nlm.nih.gov/pubmed/36080070
http://dx.doi.org/10.3390/nano12173033

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9458213/
https://www.ncbi.nlm.nih.gov/pubmed/36080070
http://dx.doi.org/10.3390/nano12173033

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