Cargando…
Preferential growth of (001)-oriented Bi(2)SiO(5) thin films deposited on (101)-oriented rutile substrates and their ferroelectric and dielectric properties
Ferroelectric thin films are important because of their great potential for use in various electric devices such as ferroelectric random-access memory. It was expected that Bi(2)SiO(5), a Si-containing ferroelectric material, would show improved ferroelectricity by targeting a film with the (001)-or...
| Autores principales: | , , , |
|---|---|
| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2022
|
| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9458711/ https://www.ncbi.nlm.nih.gov/pubmed/36076050 http://dx.doi.org/10.1038/s41598-022-19058-y |