Binary-Synaptic Plasticity in Ambipolar Ni-Silicide Schottky Barrier Poly-Si Thin Film Transistors Using Chitosan Electric Double Layer

We propose an ambipolar chitosan synaptic transistor that effectively responds to binary neuroplasticity. We fabricated the synaptic transistors by applying a chitosan electric double layer (EDL) to the gate insulator of the excimer laser annealed polycrystalline silicon (poly-Si) thin-film transist...

Descripción completa

Detalles Bibliográficos
Autores principales: Park, Ki-Woong, Cho, Won-Ju
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9459674/
https://www.ncbi.nlm.nih.gov/pubmed/36080099
http://dx.doi.org/10.3390/nano12173063

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9459674/
https://www.ncbi.nlm.nih.gov/pubmed/36080099
http://dx.doi.org/10.3390/nano12173063

Ejemplares similares