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Binary-Synaptic Plasticity in Ambipolar Ni-Silicide Schottky Barrier Poly-Si Thin Film Transistors Using Chitosan Electric Double Layer
We propose an ambipolar chitosan synaptic transistor that effectively responds to binary neuroplasticity. We fabricated the synaptic transistors by applying a chitosan electric double layer (EDL) to the gate insulator of the excimer laser annealed polycrystalline silicon (poly-Si) thin-film transist...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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MDPI
2022
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9459674/ https://www.ncbi.nlm.nih.gov/pubmed/36080099 http://dx.doi.org/10.3390/nano12173063 |