Piezoresistance Characterization of Silicon Nanowires in Uniaxial and Isostatic Pressure Variation

Silicon nanowires (SiNWs) are known to exhibit a large piezoresistance (PZR) effect, making them suitable for various sensing applications. Here, we report the results of a PZR investigation on randomly distributed and interconnected vertical silicon nanowire arrays as a pressure sensor. The samples...

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Detalles Bibliográficos
Autores principales: Fakhri, Elham, Plugaru, Rodica, Sultan, Muhammad Taha, Hanning Kristinsson, Thorsteinn, Örn Árnason, Hákon, Plugaru, Neculai, Manolescu, Andrei, Ingvarsson, Snorri, Svavarsson, Halldor Gudfinnur
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Communication
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9459738/
https://www.ncbi.nlm.nih.gov/pubmed/36080796
http://dx.doi.org/10.3390/s22176340

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9459738/
https://www.ncbi.nlm.nih.gov/pubmed/36080796
http://dx.doi.org/10.3390/s22176340

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