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Piezoresistance Characterization of Silicon Nanowires in Uniaxial and Isostatic Pressure Variation

Silicon nanowires (SiNWs) are known to exhibit a large piezoresistance (PZR) effect, making them suitable for various sensing applications. Here, we report the results of a PZR investigation on randomly distributed and interconnected vertical silicon nanowire arrays as a pressure sensor. The samples...

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Detalles Bibliográficos
Autores principales:	Fakhri, Elham, Plugaru, Rodica, Sultan, Muhammad Taha, Hanning Kristinsson, Thorsteinn, Örn Árnason, Hákon, Plugaru, Neculai, Manolescu, Andrei, Ingvarsson, Snorri, Svavarsson, Halldor Gudfinnur
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2022
Materias:	Communication
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9459738/ https://www.ncbi.nlm.nih.gov/pubmed/36080796 http://dx.doi.org/10.3390/s22176340

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