Molecular beam homoepitaxy of N-polar AlN: Enabling role of aluminum-assisted surface cleaning

N-polar aluminum nitride (AlN) is an important building block for next-generation high-power radio frequency electronics. We report successful homoepitaxial growth of N-polar AlN by molecular beam epitaxy (MBE) on large-area, cost-effective N-polar AlN templates. Direct growth without any in situ su...

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Detalles Bibliográficos
Autores principales: Zhang, Zexuan, Hayashi, Yusuke, Tohei, Tetsuya, Sakai, Akira, Protasenko, Vladimir, Singhal, Jashan, Miyake, Hideto, Xing, Huili Grace, Jena, Debdeep, Cho, YongJin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Association for the Advancement of Science 2022
Materias:
Physical and Materials Sciences
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9462693/
https://www.ncbi.nlm.nih.gov/pubmed/36083903
http://dx.doi.org/10.1126/sciadv.abo6408

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9462693/
https://www.ncbi.nlm.nih.gov/pubmed/36083903
http://dx.doi.org/10.1126/sciadv.abo6408

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