Optimization of AlGaN-Based Deep Ultraviolet Laser Diodes with Graded Rectangular Superlattice Electron Blocking Layer and Graded Trapezoidal Superlattice Hole Blocking Layer

To improve the carrier confinement capability and optimize the performance of deep ultraviolet laser diodes (DUV-LDs), we propose the graded rectangular superlattice (GRSL) electron blocking layer (EBL) and the graded trapezoidal superlattice (GTSL) hole blocking layer (HBL) in this paper. Crossligh...

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Detalles Bibliográficos
Autores principales: Zhang, Aoxiang, Jia, Liya, Zhang, Pengfei, Xing, Zhongqiu, Wang, Fang, Liu, Yuhuai
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer International Publishing 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9463500/
http://dx.doi.org/10.1007/s10946-022-10074-x

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9463500/
http://dx.doi.org/10.1007/s10946-022-10074-x

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