Optimization of AlGaN-Based Deep Ultraviolet Laser Diodes with Graded Rectangular Superlattice Electron Blocking Layer and Graded Trapezoidal Superlattice Hole Blocking Layer

To improve the carrier confinement capability and optimize the performance of deep ultraviolet laser diodes (DUV-LDs), we propose the graded rectangular superlattice (GRSL) electron blocking layer (EBL) and the graded trapezoidal superlattice (GTSL) hole blocking layer (HBL) in this paper. Crossligh...

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Autores principales: Zhang, Aoxiang, Jia, Liya, Zhang, Pengfei, Xing, Zhongqiu, Wang, Fang, Liu, Yuhuai
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer International Publishing 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9463500/
http://dx.doi.org/10.1007/s10946-022-10074-x
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author Zhang, Aoxiang
Jia, Liya
Zhang, Pengfei
Xing, Zhongqiu
Wang, Fang
Liu, Yuhuai
author_facet Zhang, Aoxiang
Jia, Liya
Zhang, Pengfei
Xing, Zhongqiu
Wang, Fang
Liu, Yuhuai
author_sort Zhang, Aoxiang
collection PubMed
description To improve the carrier confinement capability and optimize the performance of deep ultraviolet laser diodes (DUV-LDs), we propose the graded rectangular superlattice (GRSL) electron blocking layer (EBL) and the graded trapezoidal superlattice (GTSL) hole blocking layer (HBL) in this paper. Crosslight software is used to simulate and compare the DUV-LDs with rectangular superlattice (RSL) EBL and RSL HBL, GRSL EBL and GRSL HBL, and GRSL EBL and GTSL HBL. The simulation results indicate that GRSL EBL and GTSL HBL increase the carrier concentration in the quantum wells, reduce the electron leakage in the p-type region and the hole leakage in the n-type region, increase the radiation recombination rate, reduce the threshold voltage and threshold current, and increase the electro-optical conversion efficiency and output power of DUV-LDs more effectively.
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spelling pubmed-94635002022-09-10 Optimization of AlGaN-Based Deep Ultraviolet Laser Diodes with Graded Rectangular Superlattice Electron Blocking Layer and Graded Trapezoidal Superlattice Hole Blocking Layer Zhang, Aoxiang Jia, Liya Zhang, Pengfei Xing, Zhongqiu Wang, Fang Liu, Yuhuai J Russ Laser Res Article To improve the carrier confinement capability and optimize the performance of deep ultraviolet laser diodes (DUV-LDs), we propose the graded rectangular superlattice (GRSL) electron blocking layer (EBL) and the graded trapezoidal superlattice (GTSL) hole blocking layer (HBL) in this paper. Crosslight software is used to simulate and compare the DUV-LDs with rectangular superlattice (RSL) EBL and RSL HBL, GRSL EBL and GRSL HBL, and GRSL EBL and GTSL HBL. The simulation results indicate that GRSL EBL and GTSL HBL increase the carrier concentration in the quantum wells, reduce the electron leakage in the p-type region and the hole leakage in the n-type region, increase the radiation recombination rate, reduce the threshold voltage and threshold current, and increase the electro-optical conversion efficiency and output power of DUV-LDs more effectively. Springer International Publishing 2022-09-10 2022 /pmc/articles/PMC9463500/ http://dx.doi.org/10.1007/s10946-022-10074-x Text en © Springer Science+Business Media, LLC, part of Springer Nature 2022, Springer Nature or its licensor holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law. This article is made available via the PMC Open Access Subset for unrestricted research re-use and secondary analysis in any form or by any means with acknowledgement of the original source. These permissions are granted for the duration of the World Health Organization (WHO) declaration of COVID-19 as a global pandemic.
spellingShingle Article
Zhang, Aoxiang
Jia, Liya
Zhang, Pengfei
Xing, Zhongqiu
Wang, Fang
Liu, Yuhuai
Optimization of AlGaN-Based Deep Ultraviolet Laser Diodes with Graded Rectangular Superlattice Electron Blocking Layer and Graded Trapezoidal Superlattice Hole Blocking Layer
title Optimization of AlGaN-Based Deep Ultraviolet Laser Diodes with Graded Rectangular Superlattice Electron Blocking Layer and Graded Trapezoidal Superlattice Hole Blocking Layer
title_full Optimization of AlGaN-Based Deep Ultraviolet Laser Diodes with Graded Rectangular Superlattice Electron Blocking Layer and Graded Trapezoidal Superlattice Hole Blocking Layer
title_fullStr Optimization of AlGaN-Based Deep Ultraviolet Laser Diodes with Graded Rectangular Superlattice Electron Blocking Layer and Graded Trapezoidal Superlattice Hole Blocking Layer
title_full_unstemmed Optimization of AlGaN-Based Deep Ultraviolet Laser Diodes with Graded Rectangular Superlattice Electron Blocking Layer and Graded Trapezoidal Superlattice Hole Blocking Layer
title_short Optimization of AlGaN-Based Deep Ultraviolet Laser Diodes with Graded Rectangular Superlattice Electron Blocking Layer and Graded Trapezoidal Superlattice Hole Blocking Layer
title_sort optimization of algan-based deep ultraviolet laser diodes with graded rectangular superlattice electron blocking layer and graded trapezoidal superlattice hole blocking layer
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9463500/
http://dx.doi.org/10.1007/s10946-022-10074-x
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