Epitaxial growth of SiGe films by annealing Al–Ge alloyed pastes on Si substrate

A simple, low-cost, and non-vacuum epitaxial growth method to realize large-area semiconductors on crystalline silicon will become the game-changer for various applications. For example, we can expect the disruptive effect on the cost of large-scale III–V multi-junction solar cells if we could repla...

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Detalles Bibliográficos
Autores principales: Fukuda, Keisuke, Miyamoto, Satoru, Nakahara, Masahiro, Suzuki, Shota, Dhamrin, Marwan, Maeda, Kensaku, Fujiwara, Kozo, Uraoka, Yukiharu, Usami, Noritaka
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9467981/
https://www.ncbi.nlm.nih.gov/pubmed/36096915
http://dx.doi.org/10.1038/s41598-022-19122-7

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9467981/
https://www.ncbi.nlm.nih.gov/pubmed/36096915
http://dx.doi.org/10.1038/s41598-022-19122-7

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