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Epitaxial growth of SiGe films by annealing Al–Ge alloyed pastes on Si substrate
A simple, low-cost, and non-vacuum epitaxial growth method to realize large-area semiconductors on crystalline silicon will become the game-changer for various applications. For example, we can expect the disruptive effect on the cost of large-scale III–V multi-junction solar cells if we could repla...
| Autores principales: | , , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2022
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9467981/ https://www.ncbi.nlm.nih.gov/pubmed/36096915 http://dx.doi.org/10.1038/s41598-022-19122-7 |