Ensemble GaAsSb/GaAs axial configured nanowire-based separate absorption, charge, and multiplication avalanche near-infrared photodetectors

In this study, molecular beam epitaxially grown axially configured ensemble GaAsSb/GaAs separate absorption, charge, and multiplication (SACM) region-based nanowire avalanche photodetector device on non-patterned Si substrate is presented. Our device exhibits a low breakdown voltage (V(BR)) of ∼ −10...

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Detalles Bibliográficos
Autores principales: Parakh, M., Pokharel, R., Dawkins, K., Devkota, S., Li, J., Iyer, S.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: RSC 2022
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9470064/
https://www.ncbi.nlm.nih.gov/pubmed/36133330
http://dx.doi.org/10.1039/d2na00359g

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9470064/
https://www.ncbi.nlm.nih.gov/pubmed/36133330
http://dx.doi.org/10.1039/d2na00359g

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