Interplay of the disorder and strain in gallium oxide

Ion irradiation is a powerful tool to tune properties of semiconductors and, in particular, of gallium oxide (Ga(2)O(3)) which is a promising ultra-wide bandgap semiconductor exhibiting phase instability for high enough strain/disorder levels. In the present paper we observed an interesting interpla...

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Detalles Bibliográficos
Autores principales: Azarov, Alexander, Venkatachalapathy, Vishnukanthan, Karaseov, Platon, Titov, Andrei, Karabeshkin, Konstantin, Struchkov, Andrei, Kuznetsov, Andrej
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9470558/
https://www.ncbi.nlm.nih.gov/pubmed/36100627
http://dx.doi.org/10.1038/s41598-022-19191-8

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9470558/
https://www.ncbi.nlm.nih.gov/pubmed/36100627
http://dx.doi.org/10.1038/s41598-022-19191-8

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